Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-03-08
2011-03-08
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S516000, C438S239000, C438S240000
Reexamination Certificate
active
07902632
ABSTRACT:
A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.
REFERENCES:
patent: 7485911 (2009-02-01), Kim et al.
patent: 2003/0218213 (2003-11-01), Ipposhi et al.
patent: 100175007 (1998-11-01), None
patent: 1020010004576 (2001-01-01), None
patent: 1020050071913 (2005-07-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Mar. 31, 2010.
Notice of Allowance issued from Korean Intellectual Property Office on Oct. 28, 2010.
Doan Theresa T
Hynix / Semiconductor Inc.
IP & T Group LLP
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