Pumping MOS capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S516000, C438S239000, C438S240000

Reexamination Certificate

active

07902632

ABSTRACT:
A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.

REFERENCES:
patent: 7485911 (2009-02-01), Kim et al.
patent: 2003/0218213 (2003-11-01), Ipposhi et al.
patent: 100175007 (1998-11-01), None
patent: 1020010004576 (2001-01-01), None
patent: 1020050071913 (2005-07-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Mar. 31, 2010.
Notice of Allowance issued from Korean Intellectual Property Office on Oct. 28, 2010.

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