Pulsed source ion implantation apparatus and method

Details Pulsed source ion implantation apparatus and method Pulsed source ion implantation apparatus and method

1994-04-08

1996-09-24

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, 250251, 2504922, C23C 1600

Patent

active

055587186

ABSTRACT:
A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

REFERENCES:
patent: 4725449 (1988-02-01), Ehlers et al.
patent: 4764394 (1988-08-01), Conrad
patent: 5019752 (1991-05-01), Schumacher
patent: 5212425 (1993-05-01), Goebel et al.
patent: 5218179 (1993-06-01), Matossian et al.
patent: 5329205 (1994-07-01), Goebel et al.
patent: 5330800 (1994-07-01), Schumacher et al.
patent: 5354381 (1994-10-01), Sheng

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