Pulsed laser irradiation for reducing resistivity of a doped pol

Details Pulsed laser irradiation for reducing resistivity of a doped pol Pulsed laser irradiation for reducing resistivity of a doped pol

1978-11-27

1980-04-15

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

219121L, 357 18, 357 91, 427 35, H01L 21263

Patent

active

041982460

ABSTRACT:
A method of reducing the resistivity of a doped polycrystalline silicon film deposited on a substrate comprises the step of irradiating the film with a laser pulse having an energy density of less than about 1.5 joules per square centimeter.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttle et al.
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Foti et al., ". . . Laser Annealing . . . Si Samples", Appl. Phys. 15 (Apr. 1978), 365.
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Golovchenko et al., "Annealing . . . GaAs by . . . Laser . . . ", Appl. Phys. Letts. 32 (Feb. 1978), 147.
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