Pulsed high-voltage silicon quantum dot fluorescent lamp

Details Pulsed high-voltage silicon quantum dot fluorescent lamp Pulsed high-voltage silicon quantum dot fluorescent lamp

2011-02-08

2011-02-08

Santiago, Mariceli (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

C445S025000, C445S014000, C445S050000, C427S064000, C427S067000, C427S078000

Reexamination Certificate

active

07883387

ABSTRACT:
In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

REFERENCES:
patent: 5442254 (1995-08-01), Jaskie
patent: 5455489 (1995-10-01), Bhargava
patent: 5882779 (1999-03-01), Lawandy
patent: 7132783 (2006-11-01), Kambe et al.
patent: 7569984 (2009-08-01), Yang et al.
patent: 2010/0255747 (2010-10-01), Yang et al.

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