Pulsed dual radio frequency CVD process

Details Pulsed dual radio frequency CVD process Pulsed dual radio frequency CVD process

1988-10-26

1989-06-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

427 39, 427 42, 437235, 20419212, H01L 2100, H01L 2102, H01L 2131, H01L 21469

Patent

active

048371858

ABSTRACT:
A method of depositing a thin film of silicon oxynitride (Si.sub.x O.sub.y N.sub.z) onto a semiconductor substrate utilizing dual frequency plasma enhanced chemical vapor deposition (PECVD). Plasma formation is achieved by striking gases in a reaction chamber with a high voltage, low frequency radio wave, and then triggering and applying with the leading or trailing edge of the striking pulse, a second high frequency, low power radio wave. The plasma transfers energy into reactant gases forming a thin film of silicon oxynitride (Si.sub.x O.sub.y N.sub.z) onto a semiconductor substrate. The high frequency pulses provides more efficient gas ionization and less pattern, and back oxide sensitivity to film deposition rate.

REFERENCES:
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4766471 (1988-08-01), Ovshinsky et al.

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