Pulsed deposition layer gap fill with expansion material

Details Pulsed deposition layer gap fill with expansion material Pulsed deposition layer gap fill with expansion material

2007-10-30

2007-10-30

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S758000, C438S788000, C438S432000, C257SE21631

Reexamination Certificate

active

11414459

ABSTRACT:
Conformal dielectric deposition processes supplemented with a deposited expansion material can fill high aspect ratio narrow width gaps with significantly reduced incidence of voids or weak spots. The technique can also be used generally to form composites, such as for the densification of any substrate having open spaces or gaps to be filled without the incidence of voids or seams.

REFERENCES:
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5525550 (1996-06-01), Kato
patent: 5527561 (1996-06-01), Dobson
patent: 5597395 (1997-01-01), Bocko et al.
patent: 5705028 (1998-01-01), Matsumoto
patent: 5985770 (1999-11-01), Sandhu et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6064104 (2000-05-01), Omid-Zohoor et al.
patent: 6102993 (2000-08-01), Bhandari et al.
patent: 6133160 (2000-10-01), Komiyama et al.
patent: 6184108 (2001-02-01), Omid-Zohoor et al.
patent: 6184143 (2001-02-01), Ohashi et al.
patent: 6300219 (2001-10-01), Doan et al.
patent: 6335261 (2002-01-01), Natzle et al.
patent: 6352953 (2002-03-01), Seki et al.
patent: 6372669 (2002-04-01), Sandhu et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6504233 (2003-01-01), Gorczyca et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6531377 (2003-03-01), Knorr et al.
patent: 6540838 (2003-04-01), Sneh et al.
patent: 6551339 (2003-04-01), Gavronsky
patent: 6551399 (2003-04-01), Sneh et al.
patent: 6624091 (2003-09-01), Yuan
patent: 6780789 (2004-08-01), Yu et al.
patent: 6784101 (2004-08-01), Yu et al.
patent: 6802944 (2004-10-01), Ahmad et al.
patent: 6867152 (2005-03-01), Hausmann et al.
patent: 6903005 (2005-06-01), Marsh
patent: 6908862 (2005-06-01), Li et al.
patent: 6949481 (2005-09-01), Halliyal et al.
patent: 6984591 (2006-01-01), Buchanan et al.
patent: 7097878 (2006-08-01), Rulkens et al.
patent: 7129189 (2006-10-01), Hausmann et al.
patent: 7148155 (2006-12-01), Tarafdar et al.
patent: 7163899 (2007-01-01), Cho et al.
patent: 7202185 (2007-04-01), Hausmann et al.
patent: 7223707 (2007-05-01), Papasouliotis et al.
patent: 2001/0049205 (2001-12-01), Sandhu et al.
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2003/0092241 (2003-05-01), Doan et al.
patent: 2003/0129828 (2003-07-01), Cohen et al.
patent: 2003/0134741 (2003-07-01), Weisbeck et al.
patent: 2003/0157781 (2003-08-01), Macneil et al.
patent: 2004/0025787 (2004-02-01), Selbrede et al.
patent: 2004/0043149 (2004-03-01), Gordon et al.
patent: 2004/0043569 (2004-03-01), Ahn et al.
patent: 2004/0079728 (2004-04-01), Mungekar et al.
patent: 2004/0222490 (2004-11-01), Raaijmakers et al.
patent: 2004/0247787 (2004-12-01), Mackie et al.
patent: 2005/0054213 (2005-03-01), Derderian et al.
patent: 2005/0112282 (2005-05-01), Gordon et al.
patent: 2005/0239264 (2005-10-01), Jin et al.
patent: 2005/0271813 (2005-12-01), Kher et al.
patent: 2006/0087000 (2006-04-01), Okuno
patent: 2006/0127578 (2006-06-01), Li et al.
patent: WO02/27063 (2002-04-01), None
patent: WO 03/083167 (2003-10-01), None
“Atomic Layer Deposition of Metal Oxide Thin Films,” A thesis presented by Dennis Michael Hausmann, Harvard University, 186 pages, Jul. 2002.
Hausmann et al., “Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates,” Science, vol. 308, Oct. 2002, 5 Pages.
Gordon et al., “A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches”, Chemical Vapor Deposition 2003, 9, No. 2, pp. 73-78.
Gaillard et al., “Silicon dioxide chemical vapor deposition using silane and hydrogen peroxide”, Rapid Communications, J. Vac. Sci. Technol. B 14(4), Jul./Aug. 1996, pp. 2767-2769.
Beekmann, et al., “Properties of posttreated low κ flowfill™ films and their stability after etch, resist and polymer strip processes”, Microelectronic Engineering 55(2001), pp. 73-79.
Robl et al., “Integration of Flowfill® and Forcefill® for cost effective via applications” Sep. 1999, pp. 77-83.
Penka et al., “Integration Aspects of Flowfill and Spin-on-Glass Process for Sub-0.35μm Interconnects”, pp. 1-3.
Hockele et al., “Flowfill-Process as a New Concept for Inter-Metal-Dielectrics”, Siemens AG, Semiconductor Group, 1998, pp. 235-238.
Roland et al., “Theoretical Modeling of SiO2Photochemical Vapor Deposition and Comparison to Experimental Results for Three Oxidant Chemistries: SiH4+O2, H2O/O2, and H2O2”, Chem Mater 2001, 13, 2501-2510.
Roland et al., “Low Temperature Photochemical Vapor Deposition of SiO2 Using 172 nm Xe2* Excimer Lamp Radiation with Three Oxidant Chemistries: O2, H2O/O2, and H2O2”, Chem Mater 2001, 13, 2493-2500.
Moore et al., “Reaction of hydrogen peroxide with organosilanes under chemical vapour deposition conditions”, J. Chem. Soc., Dalton Trans., 2000, 2673-2677.
Gaillard et al., “Effect of plasma and thermal annealing on chemical vapor deposition dielectrics grown using SIH4-H2O2gas mixtures”, J. Vac. Sci. Technol. A 15(5), Sep./Oct. 1997, pp. 2478-2484.
Taylor et al., “Studies on the reaction between silane and hydrogen peroxide vapour; surface formation of planarized silica layers”, J. Chem. Soc., Dalton Trans., 1997, pp. 1049-1053.
Xia et al., “High Aspect Ratio Trench Filling Using Two-Step Subatmospheric Chemical Vapor Deposited Borophosphosilicated Glass for <0.18 μm Device Application”, Journal of The Electrochemical Society, 146 (5) 1884-1888 (1999).
Xia et al., “High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicated Glass—A Solution for Next Generation Shallow Trench Isolation”, Journal of The Electrochemical Society, 146 (3) 1181-1185 (1999).
Arno et al., “Fourier Transform Infrared Characterization of Downstream Gas-Phase Species Generated by Tetraethylorthosilicate/Ozone Atmospheric Pressure Reactions”, Journal of The Electrochemical Society, 146 (1) 276-280 (1999).
Romet et al., “Modeling of Silicon Dioxide Chemical Vapor Deposition from Tetraethoxysilane and Ozone”, Journal of The Electrochemical Society, 148 (2) G82-G90 (2001).
Ikeda et al., “The Effects of Alkoxy Functional Groups on Atomospheric-Pressure Chemical Vapor Deposition Using Alkoxysilane and Ozone”, J. Electrochem. Soc., vol. 142, No. 5, May 1995, pp. 1659-1662.
“Customer A low κ Gapfill Trikon FlowFill vs FHDP”, Novellus Systems, Inc., pp. 1-12.
Papsouliotis et al., “Method for Controlling Properties of Conformal Silica Nanolaminates Formed by Rapid Vapor Deposition”, Novellus Systems, Inc., filed Jun. 22, 2004, U.S. Appl. No. 10/874,696, pp. 1-30.
Ritala et al., “Atomic Layer Deposition”, Handbook of Thin Films Materials, vol. 1, 2002, pp. 103-159.
Rulkens et al., “Methods for the Use of Alkoxysilanol Precursors for Vapor Deposition of SiO2Films”, Novellus Systems, Inc., filed Dec. 23, 2004, U.S. Appl. No. 11/021,558, pp. 1-24.
Papasouliotis et al., “Multi-Step Nanolaminate Dielectric Deposition and Etch Back Gap Fill Process”, Novellus Systems, Inc., filed Dec. 30, 2004, U.S. Appl. No. 11/026,563, pp. 1-28.
Papasouliotis et al., “Methods for Forming High Density, Conformal, Silica Nanolaminate Films Via Pulsed Deposition Layer In Structures of Confined Geometry”, Novellus Systems, Inc., filed Dec. 30, 2004, U.S. Appl. No. 11/026,284, pp. 1-24.
Cho et al., “Hydroxyl Bond Removal and Film Densification Method for Oxide Films Using Microwave Post Treatment”, Novellus Systems, Inc., U.S. Appl. No. 11/280,076, filed Nov. 15, 2005, pp. 1-27.
U.S. Office Action mailed Nov. 10, 2005, from U.S. Appl. No. 11/021,558.
U.S. Office Action mailed Dec. 30, 2005, from U.S. Appl. No. 11/026,284.
U.S. Office Action mailed Dec. 22, 2005, from U.S. Appl. No. 11/026,563.
Papasouliotis et al., “Metal-Free Catalysts for Pulsed Deposition Layer Process for Conformal Silica Laminates”, Novellus Systems, Inc., U.S. Appl. No. 11/318

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