Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-05-13
2008-05-13
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185140, C365S185190, C365S185240, C365S185280
Reexamination Certificate
active
07372732
ABSTRACT:
A method of operating on a plurality of non-volatile multi-level memory cells is disclosed. The memory cells have at least a first, second, third and fourth program level. Each of program levels corresponds to a different binary state and has a voltage threshold distribution. A constant operating voltage is maintained on the memory cells and the voltage threshold distribution of the memory cell is controlled by varying a pulse width of a programming pulse applied to each memory cell.
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Akin Gump Strauss Hauer & Feld & LLP
Macronix International Co. Ltd.
Pham Ly Duy
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