Pulse sequencing lateral growth method

Details Pulse sequencing lateral growth method Pulse sequencing lateral growth method

2005-10-31

2009-10-27

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

C117S004000, C117S009000, C117S041000, C117S042000, C117S043000

Reexamination Certificate

active

07608144

ABSTRACT:
A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.

REFERENCES:
patent: 6830616 (2004-12-01), Ohtani
patent: 7018468 (2006-03-01), Voutsas et al.
patent: 7214574 (2007-05-01), Yamazaki et al.
patent: 7396712 (2008-07-01), Tanabe et al.
Hawkins et al., CO2 laser crystallization of silicon on bulk fused silica, Laser and Electron-Beam Interactions With Solids Appleton and Celler editors, Elsevier Science Pub, 1982.

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