Pulse modulated IMPATT diode modulator

Modulators – Amplitude modulator – Nonlinear device controlled by modulating signal

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307106, 332 52, 332 59, 343 5DD, 375 71, H03K 708

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active

043284701

ABSTRACT:
A high efficiency modulator circuit for modulating a microwave oscillator having a negative resistance device comprising an IMPATT diode disposed within a resonant cavity is presented. A first transistor comprising a relatively high output impedance, fast transient response, low power dissipation, wideband current source modulates the power applied to the diode thereby reducing power dissipation and improving the power conversion efficiency of the modulator during operation. Current controlling and limiting means is provided in the emitter of the first transistor for controlling and limiting the current to the diode for improving the burn-out reliability thereof. A modulating signal is provided to the base of the first transistor by the emitter of a second transistor connected in a modified Darlington configuration for providing a high efficiency, wideband, low impedance source to the base of the first transistor improving the transient response thereof. Adjustable feedback is provided around the two transistors for tailoring the source impedance and characteristics of the modulator to the particular diode thereby further improving the power conversion efficiency, stability, and transient response of the modulator circuit.

REFERENCES:
patent: 3612914 (1971-10-01), Evans
patent: 3621463 (1971-11-01), Olson, Jr.
patent: 3628171 (1971-12-01), Kurokawa et al.
patent: 3705364 (1972-12-01), Takeshima
patent: 3792375 (1974-02-01), Brackett
patent: 3793539 (1974-02-01), Clorfeine
patent: 3815049 (1974-06-01), Beurrier
patent: 4058776 (1977-11-01), Allen, Jr. et al.
Hosking, "Microwave Voice Link", Wireless World, vol. 83, Oct. 1977, pp. 52.
Tozer et al, "A High Speed, High Stability, Current Pulse Modulator for X Band IMPATT Diodes", Journal of Physics E, vol. 8, Sep. 1975, pp. 781-783.

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