Pulse generating circuit for semiconductor device

Details Pulse generating circuit for semiconductor device Pulse generating circuit for semiconductor device

1993-01-26

1994-04-19

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307265, 307279, 307593, H03K 3284, H03K 3355

Patent

active

053048571

ABSTRACT:
The present invention is directed to a pulse generating circuit for use in a semiconductor device, in which P type MOS transistors are connected in parallel, series connected N type MOS transistors are connected in series to the P type MOS transistors in a parallel manner, the potential of a node is provided to the P type MOS transistor and the N type MOS transistors, while the potential of a node is provided to the P type MOS transistor and the N type MOS transistors, so that a one shot pulse having a substantially identical waveform can be generated either when an input clock .phi..sub.IN changes its level from an "H" level to an "L" level or from the "L" level to the "H" level.

REFERENCES:
patent: 3331032 (1967-04-01), Miller
patent: 3668423 (1972-06-01), Couch
patent: 4370569 (1983-01-01), Hunsinger
patent: 4808840 (1989-02-01), Chung et al.

Affiliated with

Also associated with

Rating

Pulse generating circuit for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pulse generating circuit for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pulse generating circuit for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-21946