Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1985-08-15
1987-03-10
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307268, 307581, 307450, 307304, H03K 3353, H03K 513
Patent
active
046492909
ABSTRACT:
A pulse generating circuit composed of MOS IGFETs formed on a semiconductor substrate. The circuit includes first and second input circuits, each composed of an enhancement/depletion transistor pair, with the drains of each pair coupled in common to a respective one of two input terminals receiving complementary input signals. The channel resistance in the on state of the depletion-type transistors is made to be significantly higher than the channel resistance of the enhancement-type transistors in the on state. An output circuit is provided composed of a depletion-type transistor and two enhancement-type transistors connected in a NOR gate configuration. The gates of the two enhancement-type transistors of the output circuit are connected to source nodes of respective ones of the input circuits, to each of which both sources and gates of the two transistors of the respective circuit are connected.
REFERENCES:
patent: 4464581 (1984-08-01), Oritani
patent: 4595845 (1986-06-01), Briggs
IBM Technical Disclosure Bulletin, vol. 18, No. 3, pp. 910-911 (Aug. 1979).
Radio Fernsehen Electronik, Bd. 31, 1982, p. 367.
Tietze, Schenk, Halbleiter-Schaltungstechnik, Springer-Verlag 1983, pp. 83-84.
Miller Stanley D.
Mitsubishi Denki & Kabushiki Kaisha
Phan Trong Quang
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