Pulse electroplating copper or copper alloys

Details Pulse electroplating copper or copper alloys Pulse electroplating copper or copper alloys

1997-07-23

1999-10-26

Valentine, Donald R.

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Treating process fluid by means other than agitation or...

205103, 205104, 205123, 438641, C25D 518, H01L 21445

Patent

active

059721928

ABSTRACT:
High aspect ratio openings in excess of 3, such as trenches, via holes or contact holes, in a dielectric layer are voidlessly filled employing a pulse or forward-reverse pulse electroplating technique to deposit copper or a copper-base alloy. A leveling agent is incorporated in the electroplating composition to ensure that the opening is filled substantially sequentially from the bottom upwardly.

REFERENCES:
patent: 2733198 (1956-01-01), Nobel et al.
patent: 2842488 (1958-07-01), Strauss et al.
patent: 2882209 (1959-04-01), Brown et al.
patent: 2972572 (1961-02-01), Cope, Jr. et al.
patent: 4073699 (1978-02-01), Hutkin
patent: 4134802 (1979-01-01), Herr
patent: 4396467 (1983-08-01), Anthony
patent: 4445978 (1984-05-01), Whartenby et al.
patent: 4514265 (1985-04-01), Rao et al.
patent: 4555315 (1985-11-01), Barbieri et al.
patent: 4574095 (1986-03-01), Baum et al.
patent: 4662788 (1997-09-01), Sandhu et al.
patent: 4666567 (1987-05-01), Loch
patent: 4789648 (1988-12-01), Chow et al.
patent: 5093279 (1992-03-01), Andreshak et al.
patent: 5240497 (1993-08-01), Shacham et al.
patent: 5252196 (1993-10-01), Sonnenberg et al.
patent: 5262354 (1993-11-01), Cote et al.
patent: 5280154 (1994-01-01), Cuomo et al.
patent: 5409587 (1995-04-01), Sandhu et al.
John A. Mock, "On-Off plating puts down dense, fine-grained finishes", ME, Sep. 1978, pp. 76-78.
George W. Jernstedt, "Better Deposits At Greater Speeds By P R Plating", reprinted from Plating, Jul. 1948.
Kaanta et al., "Dual Damascene: A ULSI Wiring Technology," VMIC Conference, Jun. 11-12,1991, pp. 144-152.
Kenney et al., "A Buried-Plate Trench Cell for a 64-Mb DRAM," Symposium on VLSI Technology Digest of Technical Papers, 1992, *pp. 14-15.
Joshi, "A New Damascence Structure for Submicrometer Interconnect Wiring," IEEE Electron Device Letters, vol. 14, No. 3, Mar. 1993, pp. 129-132.
Hopwood et al., "Mechanisms for highly ionized magnetron sputtering," Journal of Applied Physics, vol. 78, No. 2, Jul. 1995, pp. 758-765.
Rossnagel et al., "Metal ion deposition from ionized mangetron sputtering discharge," Journal of the American Vacuum Society, Jan./Feb. 1994, pp. 449-453.
Ting et al., "Selective Electroless Metal Deposition for Via Hole Filling in VLSI Multilevel Interconnection Structures," Journal of the Electrochemical Society, vol. 136, No. 2, Feb. 1989, pp. 462-466.
Ting et al., "Selective Electroless Metal Deposition for Integrated Circuit," Journal of the Electrochemical Society, vol. 136, No. 2, Feb. 1989, pp. 456-462.

Affiliated with

Also associated with

Rating

Pulse electroplating copper or copper alloys does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pulse electroplating copper or copper alloys, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pulse electroplating copper or copper alloys will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759836