Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-07-26
2005-07-26
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S127000, C257S175000, C257S107000
Reexamination Certificate
active
06921930
ABSTRACT:
The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G1), first (Th1) and second (Th2) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region (6), and a metallization (A1,A2) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.
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International Search Report from application No. PCT/FR01/04137 filed Dec. 20, 2001.
English translation of the International Preliminary Examination Report from priority application No. PCT/FR01/04137.
Jackson Jerome
Jorgenson Lisa K.
McClellan William R.
Nguyen Joseph
STMicroelectronics S.A.
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