Pulsation laser having an active region with a thicker central r

Details Pulsation laser having an active region with a thicker central r Pulsation laser having an active region with a thicker central r

1996-05-17

1998-11-17

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, H01S 307

Patent

active

058387048

ABSTRACT:
A pulsation laser includes an n-type AlGaAs cladding layer on an n-type GaAs substrate, three quantum well active layers having central increased thickness regions and disposed on the cladding layer, and a p-type AlGaAs cladding layer disposed on the quantum well active layer. The increased thickness region of the active layer is not more than one-quarter of the length of the resonator of the laser.

REFERENCES:
patent: 5040032 (1991-08-01), Kapon
patent: 5166946 (1992-11-01), Caldwell
patent: 5259049 (1993-11-01), Bona et al.
patent: 5404371 (1995-04-01), Kokubo
patent: 5559819 (1996-09-01), Abe et al.
Goto et al., "Low noise and high-power GaA1As lazers with a saturable absorbing layer", Paper for Meeting of Society of Applied Physics of Japan, Spring, 1995.

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