Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1996-09-05
1998-05-12
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117201, 117900, C30B 3500
Patent
active
057499675
ABSTRACT:
A crystal puller cell (18) provides a low particulate environment for an individual crystal puller (28). The airflow within each cell is adjustable so that a particulate level appropriate to the activity within the cell is maintained, thereby avoiding the cost of maintaining an entire growing hall (10) at a constant high level of cleanliness. Each cell includes a multi-level floor (46) that includes an operator floor (48) and a maintenance floor (52). A door (62) at the maintenance floor level opens onto a maintenance aisle used to service the machines. A door (64), at the operator floor level, opens onto a clean aisle for transporting raw material and finished product. The cell walls can include magnetic shielding if a magnetic growing process is used to reduce exposure of operators and other machines to intense magnetic fields.
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ASM/Epitasy, Inc.--Epsilon Once--Model E2--Single Wafer Epitaxial Reactor Maintenance Manual 11-322923A. Issue 2, Nov. 1990.
Hirano Yoshihiro
Sakauchi Kazuo
Uchikawa Akira
Garrett Felisa
SEH America Inc.
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