PTAT current source

Details PTAT current source PTAT current source

1993-12-30

1995-09-05

Dougherty, Thomas M.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

327512, 323901, 323312, G05F 316

Patent

active

054481589

ABSTRACT:
A current source for producing a current that is proportional to absolute temperature (i.e., "PTAT") is disclosed. The current source is based upon a circuit having a pair of current mirrors, one based upon MOS transistors and the other based upon bipolar transistors, where each of two legs in the current source include the series connection of one of the MOS transistors with one of the bipolar transistors. Further included in the disclosed circuit is a series connection of three MOS startup transistors, useful in starting up the current source in a non-critical manner. A startup current source, sourcing a non-critical startup current, turns on one of the MOS startup transistors that is connected in current mirror fashion with the MOS transistor current mirror, turning on both current mirrors. As the output current increases, the current through the MOS startup transistors also increases, until equilibrium is achieved. Early effects in the bipolar transistor current mirror are eliminated by maintaining the gate-to-source voltage of the MOS transistors equal, without requiring cascode transistors, and thus maintaining low voltage operating capability.

REFERENCES:
patent: 4593208 (1986-06-01), Single
patent: 4678876 (1986-10-01), Monticelli
patent: 4754386 (1988-06-01), De Weerd
patent: 4769589 (1988-09-01), Rosenthal
patent: 5173656 (1992-12-01), Seevinck et al.
patent: 5258702 (1993-11-01), Conzelmann et al.
patent: 5334929 (1994-08-01), Schade, Jr.
Grove, Physics and Technology of Semiconductor Devices (John Wiley & Sons, 1967) pp. 226, 227 and 212.

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