Pseudomorphic step-doped-channel field-effect transistor

Details Pseudomorphic step-doped-channel field-effect transistor Pseudomorphic step-doped-channel field-effect transistor

1997-01-31

1997-12-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, 257657, H01L 29812

Patent

active

057010200

ABSTRACT:
A pseudomorphic step-doped-channel field-effect transistor is provided, which has advantages of large transconductance, high electron mobility, high gate voltage swing and high current density, and can increase the pinch-off voltage tolerance. Thus the pseudomorphic step-doped-channel field-effect transistor is suitable for high-speed, high-power, and large-input signal circuitry systems. The pseudomorphic step-doped-channel field-effect transistor comprises: a semi-insulating GaAs substrate; an undoped GaAs layer formed on the GaAs substrate to serve as a buffer layer; an n-doping InGaAs layer formed on the undoped GaAs layer to serve as a channel layer; an undoped AlGaAs layer formed on the n-doping InGaAs layer to serve as a Schottky contact layer; an n-doping GaAs layer formed on the undoped AlGaAs layer; and metal layers formed on the undoped AlGaAs layer and the n-doping GaAs layer to respectively serve as a gate, a drain and a source of the pseudomorphic step-doped-channel field-effect transistor.

REFERENCES:
patent: 4980731 (1990-12-01), Hida
patent: 5091759 (1992-02-01), Shih et al.
patent: 5124762 (1992-06-01), Childs et al.
patent: 5331410 (1994-07-01), Kuwata
patent: 5408111 (1995-04-01), Nakajima et al.
Y. Chan, "Device Linearity Improvement by Al.sub.0.3 Ga.sub.0.7 As/In.sub.0.2 Ga.sub.0.8 As Heterostructure Doped-Channel FET's," IEEE Elelctron Device Letters, vol. 16, No. 1, Jan. 1995, pp. 33-35.

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