Pseudomorphic layer in tunnel junction VCSEL

Details Pseudomorphic layer in tunnel junction VCSEL Pseudomorphic layer in tunnel junction VCSEL

2006-11-14

2006-11-14

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S050124

Reexamination Certificate

active

07136406

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) includes an indium-based semiconductor alloy substrate, a first mirror stack over the substrate, an active region having a plurality of quantum wells over the first mirror stack, a tunnel junction over the active region, the tunnel junction including a p-doped pseudomorphically strained layer of a compound selected from the group consisting of Al-rich InAlAs, AlAs, Ga-rich InGaAs, GaAs and combinations thereof, and a second mirror stack over the tunnel junction. The pseudomorphically strained layer can be used to form a tunnel junction with a n-doped layer of InP or AlInAs, or with a lower bandgap material such as AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL.

REFERENCES:
patent: 6493372 (2002-12-01), Boucart et al.
patent: 6493373 (2002-12-01), Boucart et al.
patent: 6765238 (2004-07-01), Chang et al.
patent: 2004/0161013 (2004-08-01), Bour et al.
Sekiguchi et al, Long Wavelength GaInAsP/InP laser with n—n contacts using AlAs/InP hole injecting tunnel junction, Jpn. J. Appl. Phys., Apr. 15, 199, vol. 38, pp. L443-L445.
“Superlattice AlAs/AlInAs-oxide current aperture for long wavelength InP-based vertical-cavity surface-emitting laser structure”, N. Ohnoki, et al., Applied Physics Letters, Nov. 30, 1998, vol. 73, No. 22, pp. 3262-3264.
“Long Wavelength GaInAsP/InP Laser with n—n Contacts Using AiAs/InP Hole Injecting Tunnel Junction”, Shigeaki Sekiguchi, et al., Jpn. J. Appl. Phys., Apr. 15, 1999, vol. 38, pp. L443-L445.

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