Proximity lithography device

Details Proximity lithography device Proximity lithography device

1998-03-18

2000-06-20

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 37304

Patent

active

06078055&

ABSTRACT:
A proximity lithography device using a modified electric field. In the preferred embodiment, the modified electric field is formed by illuminating a tip of a scanning probe in close proximity of the resist surface with a laser. In an alternate embodiment, the modified electric field is formed by positioning a tip of a scanning probe within close proximity of the resist surface, where illumination from a laser is in total internal reflection within the resist. The proximity of the tip to the resist surface creates a tunneling effect and forms the modified electric field. The modified electric field alters the resist for lithographic patterning.

REFERENCES:
patent: 5384464 (1995-01-01), De Fornel et al.
patent: 5763933 (1998-06-01), White

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