Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement
Patent
1998-02-17
2000-06-06
Young, Christopher G.
Radiation imagery chemistry: process, composition, or product th
Including control feature responsive to a test or measurement
430296, G03F 900, G03C 500
Patent
active
060716584
ABSTRACT:
A proximity effect correction method for mask production by integrating the electron beam proximity effect correction method and the optical proximity effect correction method such that the problems of having too large a computer-aided design pattern data file during mask production and using the mask to transfer the image to the wafer by a stepper is solved. The correction method of this invention comprises the steps of providing a pattern for forming on a mask, and then dividing the mask area into a plurality of first area patches and a plurality of second area patches, wherein each first area patch contains part of the whole pattern while each second area patch does not contain any pattern. Next, according to pattern density and light contrast, the amount of exposure by electron beam is adjusted such that electron beam proximity effect and optical proximity effect are corrected forming a corrected pattern. Finally, using the corrected pattern, an electron beam exposure operation is carried out to form the mask.
REFERENCES:
patent: 5736281 (1998-04-01), Watson
Shy Shyi-Long
Wu H. J.
United Microelectronics Corp.
Young Christopher G.
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