Proximity effect compensation in scattering-mask lithographic pr

Details Proximity effect compensation in scattering-mask lithographic pr Proximity effect compensation in scattering-mask lithographic pr

1994-12-14

1996-07-02

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

378 34, H01J 37317

Patent

active

055324967

ABSTRACT:
In electron beam lithography, formation of micron and submicron size features is complicated by undesired nonuniform (pattern-density dependent) resist exposure from electrons backscattered from the underlying substrate. The disclosed technique uses a combination of a scattering mask and a scattering filter to add a leveling background exposure automatically and thus provide uniform contrast across the entire exposure pattern.

REFERENCES:
patent: 4463265 (1984-07-01), Owen et al.
patent: 4743766 (1988-05-01), Nakasuji et al.
patent: 4947413 (1990-08-01), Jewell et al.
patent: 5079112 (1992-01-01), Berger et al.
patent: 5097138 (1992-03-01), Wakabayashi et al.
patent: 5130213 (1992-07-01), Berger et al.

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