Proximity doping of amorphous semiconductors

Details Proximity doping of amorphous semiconductors Proximity doping of amorphous semiconductors

1983-10-06

1987-02-10

Hearn, Brian E.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148174, 148188, 29571, 357 45, 357 30, 357 88, 357 16, H01L 21203, H01L 2906

Patent

active

046421440

ABSTRACT:
A method of doping amorphous semiconductor films have a first bandgap by forming the first bandgap amorphous material in a first plurality of spaced apart layers; and then forming a second plurality of semiconductor layers of amorphous material having a second bandgap wider than the first bandgap interleaved with and contiguous with the first plurality such that the conductor and valence band step at the interfaces between the first plurality and the second plurality is of sufficient magnitude to confine carriers. The second plurality is doped such that the electrons in the gap states from the second plurality of layers transfer to the first plurality of layers and cause the conductivity of said first plurality to increase.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 4016586 (1977-04-01), Anderson et al.
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4520039 (1985-05-01), Ovshinsky

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