Coating processes – Direct application of electrical – magnetic – wave – or... – Electromagnetic or particulate radiation utilized
Reexamination Certificate
2005-08-09
2005-08-09
Chen, Bret (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Electromagnetic or particulate radiation utilized
C427S585000, C438S014000
Reexamination Certificate
active
06926935
ABSTRACT:
The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface. In this way, materials can be deposited onto a the target surface at a suitably high rate without having to expose the target surface, itself, to the beam being used to perform the material deposition. In another embodiment, the beam is directed onto a separate electron generating surface (preferably one that has a relatively high secondary electron emission coefficient) proximal to the target surface for generating the electrons to deposit the deposition material onto the target surface.
REFERENCES:
patent: 5639699 (1997-06-01), Nakamura et al.
patent: 5885354 (1999-03-01), Frosien et al.
patent: 6758900 (2004-07-01), Matsui
patent: 2001/0045525 (2001-11-01), Gerlach et al.
patent: 2003/0047691 (2003-03-01), Musil et al.
patent: 2003/0161970 (2003-08-01), Kaito
patent: 54-124879 (1979-09-01), None
Arjavac Jason Harrison
Henry Craig Matthew
Hong Liang
Lezec Henri
Notte, IV John Anthony
Chen Bret
FEI Company
Scheinberg Michael O.
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