Proximity correction system for wafer lithography

Details Proximity correction system for wafer lithography Proximity correction system for wafer lithography

1997-12-31

2000-06-27

Teska, Kevin J.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

3955002, 25049222, G06F 1750, G21K 1087

Patent

active

060816589

ABSTRACT:
A system for computing a pattern function for a polygonal pattern having a finite number of predetermined face angles. One method includes the steps of decomposing the polygon into a set of flashes, computing the pattern function by summing together all flashes evaluated at a point (x,y), and the pattern function returning a 1 if point (x,y) is inside a polygon and otherwise will return a 0. Another method for computing a two-dimensional convolution value for any point (x,y) on a polygonal pattern includes the steps of identifying a set of half-plane basis functions corresponding to each face angle of the polygonal pattern, convolving each half-plane basis function with a convolution kernel using integration to find convolved flash (cflash) x,y values, storing the cflash (x,y) values to a two-dimensional look-up table, decomposing the polygonal pattern into a set of flashes where each of the flashes is an instance of the half-plane basis functions, and computing a convolution value for point (x,y) by looking-up a corresponding cflash x,y value for each flash in the table and summing together the corresponding cflash x,y values. The present invention may be used in a method for determining correction steps to which a design layout is to be subjected during wafer proximity correction.

REFERENCES:
patent: 4812962 (1989-03-01), Witt
patent: 5051598 (1991-09-01), Ashton et al.
patent: 5182718 (1993-01-01), Harafuji et al.
patent: 5241185 (1993-08-01), Meiri et al.
patent: 5242770 (1993-09-01), Chen et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5340700 (1994-08-01), Chen et al.
patent: 5424154 (1995-06-01), Borodovsky
patent: 5432714 (1995-07-01), Chung et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5532090 (1996-07-01), Borodovsky
patent: 5533148 (1996-07-01), Sayah et al.
patent: 5553273 (1996-09-01), Liebmann
patent: 5657235 (1997-08-01), Liebmann et al.
patent: 5825647 (1998-10-01), Tsudaka
patent: 5847959 (1998-12-01), Veneklasen et al.
patent: 5863682 (1999-01-01), Abe et al.
Michael L. Rieger and John P. Stirniman, "System for Lithography Proximity Compensation," Sep. 10, 1993. No pg #.
John P. Stirniman and Michael L. Rieger, "Wafer Proximity Correction and its Impact on Mask-Making", Bacus News Photomask, Vol. 10, Issue 1, Jan. 1994. No. pg. #.
Michael L. Rieger, John P. Stirniman, Precim Company, "Using behavior modelling for proximity correction", at least as early as Dec. 31, 1994. No pg #.
John P. Stirniman, Michael L. Rieger, Optical/Laser Micro. VIII, "Fast proximity correction with zone sampling", Proc. SPIE 2197 1994, pp. 294-301, at least as early as Dec. 31, 1994.
John Stirniman, Michael Rieger, 14th Annual Bacus Symposium on Photomask Technology and Management, Proc. SPIE 2322 1994, "Optimizing proximity correction for wafer fabrication process", pp. 239-246, at least as early as Dec. 31, 1994.
OPC Technology & Product Description, "Microcontinuity," copyright 1996 MicroUnity Systems Engineering, Inc. All rights reserved. No pg #.
Michael L. Rieger, John P. Stirniman, "Customizing proximity correction for process-specific objectives," Preprint: SPIE vol. 2726, 1996. No pg #.
Anthony Yen and Alexander Tritchkov, John P. Stirniman, Geert Vandenberghe, Rik Jonckheere, Kurt Ronse, and Luc Van den hove (received May 28, 1996; accepted Aug. 17, 1996) , "Characterization and correction of optical proximity effects in deep-ultraviolet lithography using behavior modeling", J. Vac. Sci. Technol. B 14(6), Nov./Dec. 1996, copyright 1996 American Vacuum Society, pp. 4175-4178.
Precim, "Proxima.TM. Wafer Proximity Correction System", at least as early as Dec. 31, 1997. No. pg #.
Signamask Data Sheet, "Lithas: Optical Proximity Correction Software," at least as early as Dec. 31, 1997. No pg #.
Trans Vector Technologies Inc., "Now Better Quality Photomasks," at least as early as Dec. 31, 1997. No pg. #.
Michael Rieger, John Stirniman, "Mask fabrication rules for proximity-corrected patterns," at least as early as Dec. 31, 1997. No pg #.
"Proxima System," Precim Company, at least as early as Dec. 31, 1997. No pg #.
John P. Stirniman and Michael L. Rieger, "Spatial filter models to describe IC lithographic behavior," at least as early as Dec. 31, 1997. No pg #.

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