Providing a via with an increased via contact area

Details Providing a via with an increased via contact area Providing a via with an increased via contact area

2007-02-27

2007-02-27

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S774000

Reexamination Certificate

active

10674704

ABSTRACT:
An apparatus and method to provide a via with an increased via contact area. A semiconductor support layer is coupled to a dielectric layer and a contact is coupled to the dielectric layer. A via, having an enlarged end within the semiconductor support layer, passes through the semiconductor support layer and the dielectric layer and connects to the contact. In one embodiment, the formation of the via and the enlarged end in the semiconductor support layer are completed in a single dry etch process.

REFERENCES:
patent: 4954875 (1990-09-01), Clements
patent: 5229647 (1993-07-01), Gnadinger
patent: 5426072 (1995-06-01), Finnila
patent: 5463246 (1995-10-01), Matsunami
patent: 6429509 (2002-08-01), Hsuan

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