Protruded contact and insertion of inter-layer-dielectric...

Details Protruded contact and insertion of inter-layer-dielectric... Protruded contact and insertion of inter-layer-dielectric...

2006-05-15

2009-10-13

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S435000, C438S437000, C438S637000, C438S643000, C257SE21035, C257SE21233, C257SE21244, C257SE21551, C257SE21572

Reexamination Certificate

active

07601607

ABSTRACT:
An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in two hardmask films to form the dielectric film through which an interconnect opening is etched. A first example embodiment comprises the following. We form a lower interconnect and an insulating layer over a semiconductor structure. We form a first hardmask a dielectric layer, and a second hardmask layer, over the lower interconnect and insulating layer. We etch a first interconnect opening in the first hardmask, the dielectric layer and the second hardmask layer. Lastly, we form an interconnect in the first interconnect opening.

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