Protein-based semiconductor integrated circuit

Details Protein-based semiconductor integrated circuit Protein-based semiconductor integrated circuit

1995-10-17

1997-09-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 40, 257253, 257632, H01L 2348, H01L 2352, H01L 2940

Patent

active

056708270

ABSTRACT:
A semiconductor integrated circuit comprises a conductive protein electrode, such as cytochrome c, deposited on the surface of an apatite insulating layer such as hydroxyapatite, fluorinated apatite or chlorinated apatite. The apatite insulating layer is thin film coated onto a substrate such that it is substantially C-axis (002) oriented, which allows the integrated circuit to be of small size while minimizing undesired electron transfer between electrodes because the conductive protein electrode adopts the orientation of the apatite insulating film.

REFERENCES:
patent: 3999122 (1976-12-01), Winstel et al.
patent: 5087952 (1992-02-01), Ribi

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