Protective structure for semiconductor sensors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

Reexamination Certificate

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C257SE29299

Reexamination Certificate

active

07728363

ABSTRACT:
A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.

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patent: 1 229 385 (1971-04-01), None

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