Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-11-15
2005-11-15
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C501S134000
Reexamination Certificate
active
06965125
ABSTRACT:
A vapor deposited material for FPD protective film comprises a polycrystalline body, sintered body, or single crystal having a surface covered with a fluoride layer. A manufacturing device for FPD protective film comprises: a film formation section for forming a film body on one side of a substrate, and a layer formation section for forming a fluoride layer on a surface of said film body; wherein said layer formation section comprises: a layer formation chamber for housing a substrate on which said film body is formed, a gas supply mechanism for forming a fluoride layer on the surface of said film body by supplying a fluoridation agent towards said substrate in said layer formation chamber, and a substrate heating section provided in said layer formation chamber for heating said substrate.
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Kuromitsu Yoshirou
Sakurai Hideaki
Blum David S.
Mitsusbishi Materials Corporation
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