Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-07-01
2008-07-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S424000, C438S427000, C257SE21546, C257SE21548, C257SE21230, C257SE21244, C257SE21206
Reexamination Certificate
active
07393789
ABSTRACT:
Various pattern transfer and etching steps can be used to create features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed, pitch-reduced patterns of crossing elongate features that can be consolidated into a single layer. Planarizing techniques using a filler layer and a protective layer are disclosed. Portions of an integrated circuit having different heights can be etched to a common plane.
REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4508579 (1985-04-01), Goth et al.
patent: 4648937 (1987-03-01), Ogura et al.
patent: 4716131 (1987-12-01), Okazawa et al.
patent: 4776922 (1988-10-01), Bhattacharyya et al.
patent: 4838991 (1989-06-01), Cote et al.
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5047117 (1991-09-01), Roberts
patent: 5053105 (1991-10-01), Fox, III
patent: 5117027 (1992-05-01), Bernhardt et al.
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 5330879 (1994-07-01), Dennison
patent: 5356513 (1994-10-01), Burke et al.
patent: 5514885 (1996-05-01), Myrick
patent: 5670794 (1997-09-01), Manning
patent: 5721172 (1998-02-01), Jang et al.
patent: 5753546 (1998-05-01), Koh et al.
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5795830 (1998-08-01), Cronin et al.
patent: 5885900 (1999-03-01), Schwartz
patent: 5998256 (1999-12-01), Juengling
patent: 6004862 (1999-12-01), Kim et al.
patent: 6010946 (2000-01-01), Hisamune et al.
patent: 6022788 (2000-02-01), Gandy et al.
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6057573 (2000-05-01), Kirsch et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6071789 (2000-06-01), Yang et al.
patent: 6087709 (2000-07-01), Gandy et al.
patent: 6096622 (2000-08-01), Kim et al.
patent: 6146975 (2000-11-01), Kuehne et al.
patent: 6211044 (2001-04-01), Xiang et al.
patent: 6261923 (2001-07-01), Kuo et al.
patent: 6288454 (2001-09-01), Allman et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6297554 (2001-10-01), Lin
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6362057 (2002-03-01), Taylor, Jr. et al.
patent: 6383907 (2002-05-01), Hasegawa et al.
patent: 6395613 (2002-05-01), Juengling
patent: 6423474 (2002-07-01), Holscher
patent: 6448150 (2002-09-01), Tsai et al.
patent: 6455372 (2002-09-01), Weimer
patent: 6461932 (2002-10-01), Wang
patent: 6514884 (2003-02-01), Maeda
patent: 6522584 (2003-02-01), Chen et al.
patent: 6534243 (2003-03-01), Templeton
patent: 6548396 (2003-04-01), Naik et al.
patent: 6559017 (2003-05-01), Brown et al.
patent: 6566280 (2003-05-01), Meagley et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6602779 (2003-08-01), Li et al.
patent: 6632741 (2003-10-01), Clevenger et al.
patent: 6667237 (2003-12-01), Metzler
patent: 6673684 (2004-01-01), Huang et al.
patent: 6686245 (2004-02-01), Mathew et al.
patent: 6689695 (2004-02-01), Lui et al.
patent: 6706571 (2004-03-01), Yu et al.
patent: 6709807 (2004-03-01), Hallock et al.
patent: 6734107 (2004-05-01), Lai et al.
patent: 6744094 (2004-06-01), Forbes
patent: 6773998 (2004-08-01), Fisher et al.
patent: 6794699 (2004-09-01), Bissey et al.
patent: 6800930 (2004-10-01), Jackson et al.
patent: 6867116 (2005-03-01), Chung
patent: 6875703 (2005-04-01), Furukawa et al.
patent: 6893972 (2005-05-01), Rottstegge et al.
patent: 6962867 (2005-11-01), Jackson et al.
patent: 7015124 (2006-03-01), Fisher et al.
patent: 7183597 (2007-02-01), Doyle
patent: 7208379 (2007-04-01), Venugopal et al.
patent: 2002/0042198 (2002-04-01), Bjarnason et al.
patent: 2002/0045308 (2002-04-01), Juengling
patent: 2002/0063110 (2002-05-01), Cantell et al.
patent: 2002/0127810 (2002-09-01), Nakamura et al.
patent: 2003/0006410 (2003-01-01), Doyle
patent: 2003/0044722 (2003-03-01), Hsu et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2003/0127426 (2003-07-01), Chang et al.
patent: 2003/0157436 (2003-08-01), Manger et al.
patent: 2003/0207207 (2003-11-01), Li
patent: 2003/0207584 (2003-11-01), Sivakumar et al.
patent: 2003/0230234 (2003-12-01), Nam et al.
patent: 2004/0000534 (2004-01-01), Lipinski
patent: 2004/0018738 (2004-01-01), Liu
patent: 2004/0023475 (2004-02-01), Bonser et al.
patent: 2004/0023502 (2004-02-01), Tzou et al.
patent: 2004/0041189 (2004-03-01), Voshell et al.
patent: 2004/0043623 (2004-03-01), Liu et al.
patent: 2004/0053475 (2004-03-01), Sharma
patent: 2004/0079988 (2004-04-01), Harari
patent: 2004/0106257 (2004-06-01), Okamura et al.
patent: 2004/0235255 (2004-11-01), Tanaka et al.
patent: 2004/2035255 (2004-11-01), Tanaka
patent: 2005/0074949 (2005-04-01), Jung et al.
patent: 2005/0164454 (2005-07-01), Leslie
patent: 2005/0186705 (2005-08-01), Jackson et al.
patent: 2005/0272259 (2005-12-01), Hong
patent: 2006/0046200 (2006-03-01), Abatchev et al.
patent: 2006/0046201 (2006-03-01), Sandhu et al.
patent: 2006/0046422 (2006-03-01), Tran et al.
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0083996 (2006-04-01), Kim
patent: 2006/0172540 (2006-08-01), Marks et al.
patent: 2006/0211260 (2006-09-01), Tran et al.
patent: 2006/0216923 (2006-09-01), Tran et al.
patent: 2006/0231900 (2006-10-01), Lee et al.
patent: 2006/0250593 (2006-11-01), Nishi
patent: 2006/0263699 (2006-11-01), Abatchev et al.
patent: 2006/0267075 (2006-11-01), Sandhu et al.
patent: 2006/0273456 (2006-12-01), Sant et al.
patent: 2006/0281266 (2006-12-01), Wells
patent: 2007/0026672 (2007-02-01), Tang et al.
patent: 2007/0045712 (2007-03-01), Haller et al.
patent: 2007/0048674 (2007-03-01), Wells
patent: 2007/0049011 (2007-03-01), Tran
patent: 2007/0049030 (2007-03-01), Sandhu et al.
patent: 2007/0049032 (2007-03-01), Abatchev et al.
patent: 2007/0049035 (2007-03-01), Tran
patent: 2007/0049040 (2007-03-01), Bai et al.
patent: 2007/0050748 (2007-03-01), Juengling
patent: 2007/0215960 (2007-09-01), Zhu et al.
patent: 42 36 609 (1994-05-01), None
patent: 0227303 (1987-07-01), None
patent: 0491408 (1992-06-01), None
patent: 1357433 (2003-10-01), None
patent: 05343370 (1993-12-01), None
patent: H8-55908 (1996-02-01), None
patent: H8-55920 (1996-02-01), None
patent: WO 02/099864 (2002-12-01), None
patent: WO 04/001799 (2003-12-01), None
patent: WO 2004/003977 (2004-01-01), None
patent: WO 2005/034215 (2005-04-01), None
patent: WO 2006/026699 (2006-03-01), None
Bergeron, et al., “Resolution Enhancement Techniques for the 90nm Technology Node and Beyond,” Future Fab International, Issue 15, Jul. 11, 2003, 4 pages.
Bhave et al., “Developer-soluble Gap fill materials for patterning metal trenches in Via-first Dual Damascene process,” preprint of Proceedings of SPIE: Advances in Resist Technology and Processing XXI, vol. 5376, John L. Sturtevant, editor, 2004, 8 pages.
Chung et al., “Pattern multiplication method and the uniformity of nanoscale multiple lines,” J.Vac.Sci.Technol. B21(4), Jul./Aug. 2003, pp. 1491-1495.
Chung et al., “Nanoscale Multi-Line Patterning Using Sidewall Structure,” Jpn., J. App.. Phys. vol. 41 (2002) Pt. 1, No. 6B, pp. 4410-4414.
Joubert et al., “Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas,” Microelectronic Engineering 69 (2003), pp. 350-357.
Oehrlein et al., “Pattern transfer into low dielectic materials by high-density plasma etching,” Solid State Tech., May 2000, 8 pages.
“Sublithographic nanofabrication technology for nanocatalysts and DNA chips,”J. Vac. Sci. Technol., Nov./Dec. 2003; pp. 2951-2955, Choi et al.
U.S. Appl. No. 11/543,515, filed Oct. 24, 2006.
“Ex parte Cantell, unpublished decision of the Board of Patent Appeals and Interferences, Mar. 4, 2005”.
Abatchev Mirzafer
Subramanian Krupakar M.
Wells David
Zhou Baosuo
Fourson George
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
LandOfFree
Protective coating for planarization does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Protective coating for planarization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protective coating for planarization will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2775764