Protective clamp for MOS gated devices

Details Protective clamp for MOS gated devices Protective clamp for MOS gated devices

1988-07-28

1989-12-26

James, Andrew J.

357 2313, 357 231, H01L 2978

Patent

active

048901431

ABSTRACT:
A self-protected MOS gated device includes a PN junction disposed in an electrical path between the source electrode and the gate contact of the device and integrally formed with a DMOS cell of the device to protect the DMOS cell from surge voltages. The PN junction has conductivity characteristics selected to provide junction breakdown at a predetermined voltage level and at a predetermined location along the junction.

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