Protective circuit for MOS devices

Details Protective circuit for MOS devices Protective circuit for MOS devices

1976-05-24

1978-07-11

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307237, 307302, 357 41, 357 42, 357 43, 357 86, H01L 2990, H01L 2978

Patent

active

041005619

ABSTRACT:
The circuit protects the oxide of MOS devices from destructive breakdown by limiting the potential difference which can exist between two circuit nodes. By forming a protective circuit between each pair of nodes in the circuit, the range of voltages which can exist between any two nodes is predetermined, and the range can be fixed to prevent damage to the MOS devices. The protective circuit comprises a pair of diodes, a resistor, and a bipolar transistor.

REFERENCES:
patent: 3739238 (1973-06-01), Hara
patent: 3787717 (1974-01-01), Fischer et al.
patent: 3806773 (1974-04-01), Watanabe
patent: 3934159 (1976-01-01), Nomiya et al.
RCA Solid-State Power Circuits Designer's Handbook (RCA, Somerville, N.J., 1971), pp. 284-285.
RCA Solid State Devices Manual, (RCA Somerville, 1975), pp. 230-231.

Affiliated with

Also associated with

Rating

Protective circuit for MOS devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Protective circuit for MOS devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protective circuit for MOS devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-265838