Protective circuit for complementary field-effect transistors

Details Protective circuit for complementary field-effect transistors Protective circuit for complementary field-effect transistors

1985-02-27

1986-12-16

Pellinen, A. D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 93, 330264, 330298, H02H 904

Patent

active

046301640

ABSTRACT:
A protective circuit for complementary field-effect transistors in a power amplifier including an N-channel transistor whose drain is connected to the positive pole of a voltage source, and whose source is connected to an output terminal as well as to the source of a P-channel transistor whose drain is connected to the negative pole of the voltage source, a second output terminal being connected to the voltage source and the gates of the transistors and being connected to an essentially constant bias source, defining the zero voltage level. The protective circuit is characterized by its ability to provide protection against overvoltages and overcurrents with the aid of zener diodes or zener diode sections, at operating voltages below or equal to the maximum permissible operating voltage, for said transistors. These diodes or diode sections are connected as follows: the first one with its cathode to the gate of the N-channel transistor and with its anode to the collector of the P-channel transistor; the second one with its anode to the gate of the P-channel transistor and with its cathode to the collector of the N-channel transistor.

REFERENCES:
patent: 3947727 (1976-03-01), Stewart

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