Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2006-04-04
2006-04-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S173000, C257S146000
Reexamination Certificate
active
07023028
ABSTRACT:
An ESD protection structure for protecting an integrated circuit from electrostatic discharge, having a bipolar protection element, whose emitter is formed by an emitter zone of the first conduction type, whose collector is formed by a buried layer of the first conduction type, and whose base is formed by a base zone of the second conduction type disposed in-between. The base zone is spaced apart from the buried layer by an intermediate layer. Highly and lightly doped regions alternatively are provided in a section of the buried layer. The highly doped regions are spaced apart from one another by the lightly doped regions. A region with a reduced breakdown voltage of the protection element is disposed in a part of the protection element spaced apart from the section of the buried layer. Also provided is an integrated circuit having such an ESD protection structure.
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Nelms David
Tran Long
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