Protection structure for an integrated circuit

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific voltage responsive fault sensor

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361 56, 357 2313, 357 13, H02H 320

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active

048977578

ABSTRACT:
In the substrate (23) of an integrated circuit, around a pad area, a first region (24) of the first conductivity type having a high doping level in turn formed in a second region (25) of the second conductivity type and, beyond the first region with respect to the pad, a third region (26) of the second conductivity type at least partially in contact with the second region, are formed. The pad metallization (20) also establishes a contact with a portion (27) of the first region surface. A second metallization (30) connects the first region to the third one at such a location that the current path between, on the one hand, the contact area between the pad metallization and the first region and, on the other hand, the area where the third region forms a junction with the substrate (corresponding to an avalanche diode) follows a resistive path in at least one of the first or third regions.

REFERENCES:
patent: 3201682 (1965-08-01), Johnson
patent: 3787717 (1974-01-01), Fischer et al.
patent: 4405933 (1983-09-01), Avery
patent: 4456939 (1984-06-01), Ozaki et al.
patent: 4527213 (1985-07-01), Ariizumi
patent: 4802054 (1989-01-01), Yu et al.

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