Protection structure against electrostatic discharges (ESD)...

Details Protection structure against electrostatic discharges (ESD)... Protection structure against electrostatic discharges (ESD)...

2005-05-10

2005-05-10

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S174000, C257S355000, C257S356000, C257S509000, C257S510000

Reexamination Certificate

active

06891208

ABSTRACT:
A protection structure against electrostatic discharges for a semiconductor electronic device that is integrated inside a well is disclosed, wherein the well is formed on a SOI substrate and isolated dielectrically by a buried oxide layer and an isolation structure, which isolation structure includes in turn at least a dielectric trench filled with a filler material. Advantageously, the protection structure is formed at the isolation structure.

REFERENCES:
patent: 5650354 (1997-07-01), Himi et al.
patent: 6074899 (2000-06-01), Voldman
patent: 6232163 (2001-05-01), Voldman et al.
patent: 6573566 (2001-06-01), Ker et al.
patent: 20010015429 (2001-08-01), Leonardi et al.
patent: 20010022384 (2001-09-01), Leonardi et al.
patent: 20020086467 (2002-07-01), Chang et al.
patent: 20020153564 (2002-10-01), Shirai
patent: 7-29974 (1995-01-01), None

Affiliated with

Also associated with

Rating

Protection structure against electrostatic discharges (ESD)... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Protection structure against electrostatic discharges (ESD)..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protection structure against electrostatic discharges (ESD)... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3405121