Protection of the SiC surface by a GaN layer

Details Protection of the SiC surface by a GaN layer Protection of the SiC surface by a GaN layer

2008-04-08

2008-04-08

Jolley, Kirsten (Department: 1792)

Coating processes

Removable protective coating applied

C427S255110, C427S294000, C427S350000

Reexamination Certificate

active

07354619

ABSTRACT:
The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection layer being composed of gallium nitride. Advantageously, the protection layer of gallium nitride may be obtained by depositing gallium on the surface of the substrate, followed by nitridation of the gallium layer formed.The invention also relates to an “epiready” substrate. This substrate comprises an SiC substrate for which at least one surface is covered by a temporary protection layer, the said layer being composed of GaN and being two monolayers thick.

REFERENCES:
patent: 6001173 (1999-12-01), Bestwick et al.
patent: 6380050 (2002-04-01), Wang et al.
patent: 6670705 (2003-12-01), Harris et al.
M. A. L. Johnson, et al., “MBE Growth and Properties of GaN on GaN/SiC Substrates”, Solid-State Electronics, vol. 41, No. 2, XP-004033811, Feb. 1, 1997, pp. 213-218.
K. H. Ploog, et al., “Growth of High-Quality (Al, Ga) N and (Ga, In)N Heterostructures on SIC (0001) by Both Plasma-Assisted and Reactive Molecular Beam Epitaxy”, Journal of Vacuum Science and Technology B, vol. 18, No. 4, XP-002284692, Jul. and Aug. 2000, pp. 2290-2294.
L. X. Zheng, et al., “Adsorption and Desorption Kinetics of Gallium Atoms on 6H-SiC(0001) Surfaces”, Physical Review B, vol. 61, No. 7, XP-002284693, Feb. 15, 2001, pp. 4890-4893.

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