Protection of semiconductor substrates during epitaxial growth p

Details Protection of semiconductor substrates during epitaxial growth p Protection of semiconductor substrates during epitaxial growth p

1984-06-05

1986-07-22

Bernstein, Hiram H.

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

156DIG89, C30B 1906

Patent

active

046018883

ABSTRACT:
Thermal degradation of compound single crystal substrates (e.g., InP) containing a relatively volatile element (e.g., P) prior to LPE growth has been virtually eliminated by an improved protection technique. A partial pressure of the volatile element is provided by a solution (e.g., Sn-In-P) localized inside a chamber which is external to the LPE boat and which surrounds substrate prior to growth, thereby preventing thermal damage to the substrate surface. Applicability of the technique to other epitaxial growth processes (e.g., VPE and MBE) is also discussed.

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patent: 4366771 (1983-01-01), Bowers et al.
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Casey et al., Applied Physics Letters, V30, No. 5, 3/1/77, pp. 247-249.
Wrick et al., Electronics Letters, 8/5/76, V12, No. 16, pp. 394-395.

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