Protection of integrated circuit gates during metallization...

Details Protection of integrated circuit gates during metallization... Protection of integrated circuit gates during metallization...

2006-04-25

2006-04-25

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

C438S398000, C438S901000

Reexamination Certificate

active

07033900

ABSTRACT:
In one embodiment, a first transistor is configured to switch ON to discharge accumulated charges on an interconnect line during a metallization process. This advantageously protects a second transistor, which is coupled to the interconnect line, from charge buildup. The gate of the first transistor may be coupled to the interconnect line by way of a coupling capacitor. The gate of the first transistor may remain floating during the metallization process, and subsequently coupled to ground at a topmost metal level. The metallization process may be physical vapor deposition, for example.

REFERENCES:
patent: 5963412 (1999-10-01), En
patent: 6281737 (2001-08-01), Kuang et al.
patent: 6538868 (2003-03-01), Chang et al.
patent: 6611453 (2003-08-01), Ning
patent: 2001/0026970 (2001-10-01), Eitan et al.

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