Protection of inductive load switching transistors from inductiv

Details Protection of inductive load switching transistors from inductiv Protection of inductive load switching transistors from inductiv

1985-07-05

1987-11-10

Pellinen, A. D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361101, 357 13, H02H 320

Patent

active

047053224

ABSTRACT:
An arrangement for protecting inductive load switching transistors during overvoltage conditions is disclosed. The arrangement comprises a Zener diode coupled between the collector and base of the switching transistor, where the Zener diode will break down during inductive load-created overvoltage conditions and turn on the transistor. A major portion of the surge current will then flow through the activated transistor. In a particular integrated circuit realization of the arrangement, the Zener diode is formed in the same semiconductor area as the transistor by extending a portion of the base diffusion region downward to contact the buried collector region.

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