Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1997-08-25
2000-05-09
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257640, 257641, 257649, 257315, H01L 2906
Patent
active
060607661
ABSTRACT:
A semiconductor device with first and second types of devices formed in a semiconductor substrate with a barrier layer formed over the surface of the semiconductor device including over the first and second types of devices with the barrier layer removed from over the first type of device. The first type of device is a positive charge sensitive device such as a nonvolatile memory device. The semiconductor device has a hydrogen getter layer formed under the barrier layer.
REFERENCES:
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4420871 (1983-12-01), Scheibe
patent: 4982250 (1991-01-01), Manos, II et al.
patent: 5208174 (1993-05-01), Mori
R.C.Sun, J.T. Clemens and J.T. Nelson, "Effects of Silicon Nitride Encapsulation of MOS Device Stablilty," 1980 IEEE.
J. Givens, S. Geissler, O.Cain, W.Clark, C.Koburger,J.Lee, "A Low-Temperature Local Interconnect Process in a 0.25-micrometer-Channel CMOS Logic Technology with Shallow Trench Isolation," Jun. 7-8, 1994 VMIC, Conference 1994 ISMIC-103/94/0043.
En William G.
Mehta Sunil D.
Advanced Micro Devices , Inc.
Carroll J.
Nelson H. Donald
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