Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-02-05
2011-10-04
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S768000, C257SE21199, C257SE31131, C438S622000
Reexamination Certificate
active
08030777
ABSTRACT:
Methods of protecting exposed metal damascene interconnect surfaces in a process for making electronic components and the electronic components made according to such methods. An integrated circuit structure having damascene regions with exposed metal surfaces is provided into a closed processing chamber, whereby a first reactant is contacted to the exposed metal surfaces to transform a top portion of the metal layer into a protective self-aligned buffer layer. Reacting molecules of the first reactant with metal atoms of this metal layer forms the protective self-aligned buffer layer entirely within such metal layer. Alternatively, adsorbing surface-active reactant molecules onto the exposed metal surface forms the protective self-aligned buffer layer. A second reactant may be contacted to the protective self-aligned buffer layer to form a self-aligned dielectric cap layer directly over the protective self-aligned buffer layer.
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Alers Glenn B
Mountsier Thomas W
Sanganeria Mahesh K
Schravendijk Bart van
Shaviv Roey
Jiang Fang-Xing
Novellus Systems Inc.
Warren Matthew E
Weaver Austin Villeneuve & Sampson LLP
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