Protection film structure for functional devices

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428698, 428699, 428446, 428448, 4284256, 4284258, 4284244, 427 42, 427162, 73 73, 206328, B05D 306, B32B 900

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047709235

ABSTRACT:
An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.

REFERENCES:
patent: 3645779 (1972-02-01), Kienel
patent: 4187344 (1980-02-01), Fredriksson
patent: 4450201 (1984-05-01), Brill et al.
Patent Abstracts of Japan, vol. 9, No. 64, 23 Mar. 1985; & JP A 59 198 544, 10-11-84.
Patent Abstracts of Japan, vol. 7, No. 262, 22 Nov. 83; & JP A 58 143 446, 26-08-83.

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