Protection diode for a vertical semiconductor component

Details Protection diode for a vertical semiconductor component Protection diode for a vertical semiconductor component

1993-06-29

1994-09-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

257173, 257355, 257139, H01L 2360, H01L 2362, H01L 2990

Patent

active

053492323

ABSTRACT:
A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.

REFERENCES:
patent: 4051504 (1977-09-01), Hile
patent: 4792840 (1988-12-01), Nadd
patent: 5053743 (1991-10-01), Mille et al.

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