Protection diode for a vertical semiconductor component

Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode

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Details

257173, 257355, H01L 29861, H01L 2974, H01L 2362

Patent

active

057290440

ABSTRACT:
A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.

REFERENCES:
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patent: 4051504 (1977-09-01), Hile
patent: 4319265 (1982-03-01), Rosen et al.
patent: 4695916 (1987-09-01), Sato et al.
patent: 4792840 (1988-12-01), Nadd
patent: 5053743 (1991-10-01), Mille et al.
patent: 5146297 (1992-09-01), Collins et al.
patent: 5349232 (1994-09-01), Mille et al.

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