Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode – With means to limit area of breakdown
Reexamination Certificate
2007-10-09
2007-10-09
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Avalanche diode
With means to limit area of breakdown
C257S355000, C257SE21356, C361S091500
Reexamination Certificate
active
11080274
ABSTRACT:
A protection device for handling energy transients includes a plurality of basic unit Zener diodes connected in series to achieve a desired breakdown voltage. Each of the basic unit Zener diodes is formed in a first-type substrate. Each of the basic unit Zener diodes comprises a second-type well formed in the substrate, a second-type Zener region formed in the second-type well and a first-type+ region formed over the second-type Zener region between a first and second second-type+ region.
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Clear Troy D.
Dikeman John M.
Glenn Jack L.
Gose Mark W.
Delphi Technologies Inc.
Funke Jimmy L.
Liu Benjamin Tzu-Hung
Tran Minhloan
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