Protection device against the driving effect of parasitic transi

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

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361 91, 357 2313, 357 48, H02H 320

Patent

active

047759127

ABSTRACT:
Described is a protection device for power PNP transistors against the anomalous driving effect of parasitic transistors which are excited, under certain limit conditions, in bipolar type monolithic integrated circuits. The device is of simple integration and requires essentially the use of a PNP protection transistor connected with its emitter and collector respectively to the emitter or to a node at a higher potential than the latter and to the base of the PNP transistor to be protected and physically made on the chip in a position essentially adjacent to the PNP transistor to be protected.

REFERENCES:
patent: 4496849 (1985-01-01), Kotowski
patent: 4558286 (1985-12-01), Neidorff

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