Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-09-01
1996-03-26
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257654, 257551, 257355, H01L 2900
Patent
active
055023290
ABSTRACT:
A protection monolithic semiconductor component has an input terminal, an output terminal and a reference terminal. The component includes between the input terminal and output terminal, a first diode of a first polarity having a low forward dissipation and a reverse breakdown voltage ranging from 20 to 40 volts; and, between the output terminal and reference terminal, a second protection diode having the same polarity. The first diode is laterally disposed between two electrodes of the front surface of the component, and the second diode is vertically disposed between an electrode on the front surface of the component and an electrode on the rear surface.
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"The time base circuit," Electronics, Apr. 26, 1971, p. 42.
Bowers Courtney A.
Crane Sara W.
Driscoll David M.
Morris James H.
SGS-Thomson Microelectronics S.A.
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