Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control
Patent
1996-03-29
1998-10-13
Wells, Kenneth B.
Miscellaneous active electrical nonlinear devices, circuits, and
Signal converting, shaping, or generating
Amplitude control
327327, 327379, 361111, 361212, 257355, 257362, H03K 1716
Patent
active
058217975
ABSTRACT:
A protection circuit (1) for input comprises two transistors (11, 12) connected in series between a first voltage supply (V.sub.cc) and a second voltage supply (GND), and an intermediate junction point is used as an input terminal and an output terminal. When a surge voltage is applied to the input terminal, since terminals (51, 53) of the two transistors (11, 12) are connected to predetermined junction points in such a way that the transistors can operate as bipolar transistors or cause punch through phenomenon (without causing breakdown operation of a low response speed to surge voltage), the surge voltage can be absorbed at high speed, thus increasing anti-ESD (electro static discharge) rate. Further, a protection circuit for power supply comprises two transistors (31, 32) connected in parallel to each other between a first voltage supply (V.sub.cc) and a second voltage supply (GND). Similarly, the terminals (65, 68) of the two transistors are connected to predetermined junction points in such a way that when a surge voltage is superimposed upon the supply voltage, at least one of the transistors can operate as a bipolar transistor, without causing breakdown operation.
REFERENCES:
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 4819047 (1989-04-01), Gilfeather et al.
patent: 4996626 (1991-02-01), Say
patent: 5173755 (1992-12-01), Co et al.
patent: 5237395 (1993-08-01), Lee
patent: 5272586 (1993-12-01), Yen
patent: 5449940 (1995-09-01), Hirata
patent: 5477414 (1995-12-01), Li et al.
patent: 5539327 (1996-07-01), Shigehara et al.
Patent Abstracts of Japan, vol. 12, No. 7 (E-571), Jan. 9, 1988, JP-A-62-165969, Jul. 22, 1987.
Patent Abstracts of Japan, vol. 10, No. 201 (E-419), Jul. 15, 1986, JP-A-61-043468, Mar. 3, 1986.
Patent Abstracts of Japan, vol. 2, No. 11 (E-007), Jan. 26, 1978, JP-A-52-128081, Oct. 27, 1977.
Fujiwara Ryuji
Kinugasa Masanori
Kabushiki Kaisha Toshiba
Wells Kenneth B.
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