Protection circuit for semiconductor devices

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

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327327, 327379, 361111, 361212, 257355, 257362, H03K 1716

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active

058217975

ABSTRACT:
A protection circuit (1) for input comprises two transistors (11, 12) connected in series between a first voltage supply (V.sub.cc) and a second voltage supply (GND), and an intermediate junction point is used as an input terminal and an output terminal. When a surge voltage is applied to the input terminal, since terminals (51, 53) of the two transistors (11, 12) are connected to predetermined junction points in such a way that the transistors can operate as bipolar transistors or cause punch through phenomenon (without causing breakdown operation of a low response speed to surge voltage), the surge voltage can be absorbed at high speed, thus increasing anti-ESD (electro static discharge) rate. Further, a protection circuit for power supply comprises two transistors (31, 32) connected in parallel to each other between a first voltage supply (V.sub.cc) and a second voltage supply (GND). Similarly, the terminals (65, 68) of the two transistors are connected to predetermined junction points in such a way that when a surge voltage is superimposed upon the supply voltage, at least one of the transistors can operate as a bipolar transistor, without causing breakdown operation.

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