Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1997-09-30
1999-03-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
361 91, H01L 2900
Patent
active
058805141
ABSTRACT:
A protection circuit for a semiconductor device, the protection circuit being connected an input terminal of the semiconductor device in parallel with an internal circuit proper of the semiconductor device, comprising a semiconductor substrate having one conductivity, a first diffusion layer having the other conductivity produced along the top surface of the semiconductor substrate, a second diffusion layer having the other conductivity produced along the top surface of the first diffusion layer, the impurity concentration of the second diffusion layer being larger than that of the first diffusion layer, at least one third diffusion layer having one conductivity produced along the top surface of the semiconductor substrate and the first diffusion layer across the junction of the first diffusion layer, the impurity concentration being larger than that of the semiconductor substrate, an insulator film produced to cover a portion of the second and third diffusion layers and the first diffusion layer, a pair of insulator films produced to cover a portion of the remaining area of the third diffusion layers, an electrode arranged to contact the second diffusion layer and to cover the insulator layer covering the first diffusion layer, and the electrode being connected the input terminal and the internal circuit proper of the semiconductor device, whereby the protection circuit allows positive surge voltages to escape, and becomes durable against negative surge voltages.
OKI Electric Industry Co., Ltd.
Prenty Mark V.
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